PART |
Description |
Maker |
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol HiPerFETTM Power MOSFETs MOSFET with FAST Intrinsic Diode Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS[IXYS Corporation]
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IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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IXFF24N100 IXYSCORP-IXFF24N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power Mosfet in High Voltage ISOPLUS I4-PACTM
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IXYS Corporation
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IXFT66N20Q IXFH66N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs Q-Class 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
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IXYS[IXYS Corporation] IXYS, Corp.
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IXFN130N30 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Single Die MOSFET
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IXYS http://
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IXFH20N60 IXFM20N60 IXFH15N60 IXFM15N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?.35惟??娌??澧?己??HiPerFET???MOSFET)
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IXYS[IXYS Corporation]
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SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
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INFINEON[Infineon Technologies AG]
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IXFH76N07-12 IXFH76N06-11 IXFH76N06-12 IXFH76N07-1 |
HiPerFET Power MOSFETs 76 A, 60 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 76 A, 70 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 HiPerFET Power MOSFETs 76 A, 70 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 HiPerFET Power MOSFETs 76 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
|
IXFH80N10 IXFT80N10 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-247AD Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS Corporation
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BUZ900P BUZ901P |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V. N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V. N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路)) N?CHANNEL POWER MOSFET
|
Magnatec Seme LAB
|
IXFR150N15 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电B>12.5mΩ的N沟道增强型HiPerFET功率MOSFET) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET) HiPerFET Power MOSFETs ISOPLUS247
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IXYS Corporation
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